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CYStech Electronics Corp.
General Purpose PNP Epitaxial Planar Transistor
Spec. No. : C307A3 Issued Date : 2003.06.27
Revised Date : Page No. : 1/4
BTP5401A3
Description
* The BTP5401A3 is designed for general purpose amplification. * Large IC , IC( Max) = -0.6A * High BVCEO, BVCEO= -150V * Complementary to BTN5551A3.
Symbol
BTP5401A3
Outline
TO-92
BBase CCollector EEmitter
EBC
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd RJA Tj Tstg Limits -160 -150 -5 -0.6 625 200 150 -55~+150 Unit V V V A mW C/W C C
BTP5401A3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) 1 *VCE(sat) 2 *VBE(sat) 1 *VBE(sat) 2 hFE 1 hFE 2 hFE 3 fT Cob Min. -160 -150 -5 50 56 50 100 Typ. Max. -50 -50 -0.2 -0.5 -1 -1 390 300 6 Unit V V V nA nA V V V V MHz pF
Spec. No. : C307A3 Issued Date : 2003.06.27
Revised Date : Page No. : 2/4
Test Conditions IC=-100A IC=-1mA IE=-10A VCB=-120V VEB=-3V IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCE=-5V, IC=-1mA VCE=-5V, IC=-10mA VCE=-5V, IC=-50mA VCE=-10V, IC=-10mA, f=100MHz VCB=-10V, f=1MHz
*Pulse Test: Pulse Width 380s, Duty Cycle2%
Classification Of hFE 2
Rank Range K 56~120 P 82~180 Q 120~270 R 180~390
BTP5401A3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000 Saturation Voltage---(mV)
HFE@VCE=5V
Spec. No. : C307A3 Issued Date : 2003.06.27
Revised Date : Page No. : 3/4
Saturation Voltage vs Collector Current
1000
VCE(SAT)@IC=10IB
Current Gain---HFE
100
100
10 0.1 1 10 100 Collector Current---IC(mA)
10 0.1 1 10 100 Collector Current---IC(mA)
Saturation Voltage vs Collector Current
1000 Cutoff Frequency---FT(GHZ) Saturation Voltage---(mV) 1
Cutoff Frequency vs Collector Current
FT@VCE=12V
VBE(SAT)@IC=10IB
100 0.1 1 10 100 1000 Collector Current---IC(mA)
0.1 1 10 Collector Current---IC(mA) 100
Power Derating Curve
700 Power Dissipation---PD(mW) 600 500 400 300 200 100 0 0 50 100 150 200 Ambient Temperature --- Ta( )
BTP5401A3
CYStek Product Specification
CYStech Electronics Corp.
TO-92 Dimension
Spec. No. : C307A3 Issued Date : 2003.06.27
Revised Date : Page No. : 4/4
A B
1 2 3
2
Marking:
N5401
3
C
D
H I E F
G
1
Style: Pin 1.Emitter 2.Base 3.Collector 3-Lead TO-92 Plastic Package CYStek Package Code: A3
*: Typical
DIM A B C D E F
Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480
Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76
DIM G H I 1 2 3
Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5 *2 *2
Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5 *2 *2
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTP5401A3
CYStek Product Specification

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